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STD5NM60T4 - N-channel Power MOSFET

Description

AM01475v1_noZen the company's PowerMESH horizontal layout.

Features

  • TAB 23 1 DPAK D(2, TAB) Order code VDS RDS(on) max. ID STD5NM60T4 600 V 1.0 Ω 5A.
  • 100% avalanche tested.
  • Low input capacitance and gate charge.
  • Low gate input resistance.

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Datasheet preview – STD5NM60T4

Datasheet Details

Part number STD5NM60T4
Manufacturer STMicroelectronics
File Size 831.39 KB
Description N-channel Power MOSFET
Datasheet download datasheet STD5NM60T4 Datasheet
Additional preview pages of the STD5NM60T4 datasheet.

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Full PDF Text Transcription

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STD5NM60T4 Datasheet N-channel 600 V, 0.9 Ω typ., 5 A MDmesh Power MOSFET in a DPAK package Features TAB 23 1 DPAK D(2, TAB) Order code VDS RDS(on) max. ID STD5NM60T4 600 V 1.0 Ω 5A • 100% avalanche tested • Low input capacitance and gate charge • Low gate input resistance Applications • Switching applications G(1) Description S(3) This N-channel Power MOSFET is developed using STMicroelectronics' revolutionary MDmesh technology, which associates the multiple drain process with AM01475v1_noZen the company's PowerMESH horizontal layout. This device offers extremely low on- resistance, high dv/dt, and excellent avalanche characteristics.
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