STD5NM60-1 Datasheet PDF (N-channel Power MOSFET) | Download STMicroelectronics STD5NM60-1

STD5NM60-1 - N-channel Power MOSFET

Description

This N-channel Power MOSFET is developed using STMicroelectronics' revolutionary MDmesh technology, which associates the multiple drain process with the company's PowerMESH horizontal layout.

Features

TAB Order code VDS RDS(on) max. ID STD5NM60-1 600 V 1.0 Ω 5A 3 2 1.
100% avalanche tested.
Low input capacitance and gate charge IPAK.
Low gate input resistance D(2, TAB).

Datasheet Details

Part number	STD5NM60-1
Manufacturer	STMicroelectronics
File Size	580.46 KB
Description	N-channel Power MOSFET
Datasheet	STD5NM60-1 Datasheet
Additional preview pages of the STD5NM60-1 datasheet.

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Full PDF Text Transcription

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STD5NM60-1 Datasheet N-channel 600 V, 0.9 Ω typ., 5 A MDmesh Power MOSFET in an IPAK package Features TAB Order code VDS RDS(on) max. ID STD5NM60-1 600 V 1.0 Ω 5A 3 2 1 • 100% avalanche tested • Low input capacitance and gate charge IPAK • Low gate input resistance D(2, TAB) Applications • Switching applications G(1) S(3) Description AM01475v1_noZen This N-channel Power MOSFET is developed using STMicroelectronics' revolutionary MDmesh technology, which associates the multiple drain process with the company's PowerMESH horizontal layout. This device offers extremely low onresistance, high dv/dt, and excellent avalanche characteristics.

Published: Jun 26, 2023 |