Datasheet4U Logo Datasheet4U.com

STD5NM50T4 - N-channel MOSFET

Description

This N-channel Power MOSFET is developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout.

This device offers extremely low on-resistance, high dv/dt and excellent avalanche characteristics.

Features

  • Order code VDS RDS(on) max. STD5NM50T4 500 V 0.8 Ω.
  • 100% avalanche tested.
  • Low input capacitance and gate charge.
  • Low gate input resistance.

📥 Download Datasheet

Datasheet preview – STD5NM50T4

Datasheet Details

Part number STD5NM50T4
Manufacturer STMicroelectronics
File Size 446.46 KB
Description N-channel MOSFET
Datasheet download datasheet STD5NM50T4 Datasheet
Additional preview pages of the STD5NM50T4 datasheet.

📁 Similar Datasheet

  • STD5NM50T4 - N-Channel MOSFET (INCHANGE)
  • STD5NM50 - N-CHANNEL Power MOSFET (ST Microelectronics)
  • STD5NM50-1 - N-CHANNEL Power MOSFET (ST Microelectronics)
  • STD5NM60 - N-CHANNEL MDmesh Power MOSFET (ST Microelectronics)
  • STD5NM60 - N-Channel MOSFET (INCHANGE)
  • STD5NM60-1 - N-Channel MOSFET (INCHANGE)
  • STD5N20 - N - CHANNEL POWER MOS TRANSISTOR (ST Microelectronics)
  • STD5N52U - N-Channel Power MOSFET (ST Microelectronics)
  • STD5NB20 - N - CHANNEL PowerMESHO MOSFET (ST Microelectronics)
  • STD5NB30 - N - CHANNEL PowerMESHO MOSFET (ST Microelectronics)
Other Datasheets by STMicroelectronics

Full PDF Text Transcription

Click to expand full text
STD5NM50T4 Datasheet N-channel 500 V, 0.7 Ω typ., 7.5 A, MDmesh™ Power MOSFET in a DPAK package TAB 23 1 DPAK D(2, TAB) Features Order code VDS RDS(on) max. STD5NM50T4 500 V 0.8 Ω • 100% avalanche tested • Low input capacitance and gate charge • Low gate input resistance Applications • Switching applications ID 7.5 A G(1) S(3) AM01475v1_noZen Description This N-channel Power MOSFET is developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. This device offers extremely low on-resistance, high dv/dt and excellent avalanche characteristics.
Published: |