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STB51N60DM6 Datasheet, STMicroelectronics

STB51N60DM6 mosfet equivalent, n-channel power mosfet.

STB51N60DM6 Avg. rating / M : 1.0 rating-16

datasheet Download (Size : 732.60KB)

STB51N60DM6 Datasheet
STB51N60DM6
Avg. rating / M : 1.0 rating-16

datasheet Download (Size : 732.60KB)

STB51N60DM6 Datasheet

Features and benefits

Order code VDS RDS(on) max. ID STB51N60DM6 600 V 80 mΩ 36 A
* Fast-recovery body diode
* Lower RDS(on) per area vs previous generation
* Low gate .

Application

G(1)
* Switching applications Description S(3) AM01476v1_tab This high-voltage N-channel Power MOSFET is part of th.

Description

S(3) AM01476v1_tab This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fastrecovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improve.

Image gallery

STB51N60DM6 Page 1 STB51N60DM6 Page 2 STB51N60DM6 Page 3

TAGS

STB51N60DM6
N-channel
Power
MOSFET
STMicroelectronics

Manufacturer


STMicroelectronics (https://www.st.com/)

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