STB51N60DM6 mosfet equivalent, n-channel power mosfet.
Order code
VDS
RDS(on) max.
ID
STB51N60DM6
600 V
80 mΩ
36 A
* Fast-recovery body diode
*
Lower RDS(on) per area vs previous generation
* Low gate .
G(1)
* Switching applications
Description
S(3)
AM01476v1_tab
This high-voltage N-channel Power MOSFET is part of th.
S(3)
AM01476v1_tab
This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fastrecovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improve.
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