SCT040W65G3-4 mosfet equivalent, silicon carbide power mosfet.
HiP247-4
2 34 1
Drain(1, TAB)
Order code
VDS
RDS(on) typ.
ID
SCT040W65G3-4
650 V
45 mΩ
30 A
*
Very low RDS(on) over the entire temperature range
* H.
Gate(4) Driver
source(3)
* Switching mode power supply
* Power supply for renewable energy systems
* DC-DC.
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high.
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