SCT040W65G3-4 datasheet, mosfet equivalent, STMicroelectronics

Features and benefits

HiP247-4 2 34 1 Drain(1, TAB) Order code VDS RDS(on) typ. ID SCT040W65G3-4 650 V 45 mΩ 30 A
* Very low RDS(on) over the entire temperature range
* H.

Application

Gate(4) Driver source(3)
* Switching mode power supply
* Power supply for renewable energy systems
* DC-DC.

Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high.

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