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SCT040W65G3-4 Datasheet, STMicroelectronics

SCT040W65G3-4 mosfet equivalent, silicon carbide power mosfet.

SCT040W65G3-4 Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 478.92KB)

SCT040W65G3-4 Datasheet

Features and benefits

HiP247-4 2 34 1 Drain(1, TAB) Order code VDS RDS(on) typ. ID SCT040W65G3-4 650 V 45 mΩ 30 A
* Very low RDS(on) over the entire temperature range
* H.

Application

Gate(4) Driver source(3)
* Switching mode power supply
* Power supply for renewable energy systems
* DC-DC.

Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high.

Image gallery

SCT040W65G3-4 Page 1 SCT040W65G3-4 Page 2 SCT040W65G3-4 Page 3

TAGS

SCT040W65G3-4
Silicon
carbide
Power
MOSFET
STMicroelectronics

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