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SCT040H65G3SAG Datasheet, STMicroelectronics

SCT040H65G3SAG mosfet equivalent, automotive-grade silicon carbide power mosfet.

SCT040H65G3SAG Avg. rating / M : 1.0 rating-11

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SCT040H65G3SAG Datasheet

Features and benefits

Order code SCT040H65G3SAG VDS 650 V RDS(on) max. 55 mΩ ID 30 A
* AEC-Q101 qualified
* Very low RDS(on) over the entire temperature range
* High speed swit.

Application


* Main inverter (electric traction)
* DC/DC converter for EV/HEV
* On board charger (OBC) Description This s.

Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high.

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TAGS

SCT040H65G3SAG
Automotive-grade
silicon
carbide
Power
MOSFET
STMicroelectronics

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