SCT040H120G3-7
SCT040H120G3-7 is Silicon carbide Power MOSFET manufactured by STMicroelectronics.
Silicon carbide Power MOSFET 1200 V, 40 mΩ typ., 40 A in an H²PAK-7 package
7 1 H2PAK-7
Drain (TAB)
Gate (1) Driver source (2)
Power source (3, 4, 5, 6, 7)
N-ch G1DS2PS34567DTAB
Features
Order code
RDS(on) typ.
1200 V
40 mΩ
40 A
- Very fast and robust intrinsic body diode
- Very low RDS(on) over the entire temperature range
- High speed switching performances
- Source sensing pin for increased efficiency
Applications
- Switching mode power supply
- Power supply for renewable energy systems
- DC-DC converters
Description
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation Si C MOSFET technology. The device Features a very low RDS(on) over the entire temperature range bined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
Product status link SCT040H120G3-7
Product summary
Order code
Marking
40H120G3
Package
H²PAK-7
Packing...
