SCT040H120G3-7 mosfet equivalent, silicon carbide power mosfet.
Order code
VDS
RDS(on) typ.
ID
SCT040H120G3-7
1200 V
40 mΩ
40 A
* Very fast and robust intrinsic body diode
*
Very low RDS(on) over the entire temperat.
* Switching mode power supply
* Power supply for renewable energy systems
* DC-DC converters
Description
.
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very hig.
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