SCT040HU120G3AG Key Features
- AEC-Q101 qualified
- Very low RDS(on) over the entire temperature range
- High speed switching performances
- Very fast and robust intrinsic body diode
- Source sensing pin for increased efficiency
- Part: SCT040HU120G3AG
- Manufacturer: STMicroelectronics (official site)
- Size: 619.21 KB
Related STMicroelectronics Datasheets
| Part Number | Description |
|---|---|
| SCT040HU65G3AG | Automotive-grade silicon carbide Power MOSFET |
| SCT040H120G3-7 | Silicon carbide Power MOSFET |
| SCT040H120G3AG | Automotive-grade silicon carbide Power MOSFET |
| SCT040H65G3AG | Automotive-grade silicon carbide Power MOSFET |
| SCT040H65G3SAG | Automotive-grade silicon carbide Power MOSFET |
SCT040HU120G3AG Description
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology.
SCT040HU120G3AG Applications
- DC/DC converter for EV/HEV