TAB Order code VDS RDS(on) typ. ID 7 SCT040HU120G3AG 1200 V 40 mΩ 40 A Gate (1) Driver source (2) 1 HU3PAK Drain (TAB) Power source (3, 4, 5, 6, 7) N-chG1DS2P.

* DC/DC converter for EV/HEV
* Main inverter (electric traction)
* On board charger (OBC) Description Thi.

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very hig.

SCT040HU65G3AG

SCT040H120G3-7

SCT040H120G3AG

SCT040H65G3AG

SCT040H65G3SAG

SCT040TO65G3

SCT040W120G3-4AG

SCT040W120G3AG

SCT040W65G3-4

SCT04N60D

SCT04N60E

SCT04N60FD

SCT04N60P

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts