SCT040HU120G3AG Automotive-grade silicon carbide Power MOSFET

STMicroelectronics

SCT040HU120G3AG Description

SCT040HU120G3AG Datasheet Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mΩ typ., 40 A in an HU3PAK package .
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology.

SCT040HU120G3AG Features

* TAB Order code VDS RDS(on) typ. ID 7 SCT040HU120G3AG 1200 V 40 mΩ 40 A Gate (1) Driver source (2) 1 HU3PAK Drain (TAB) Power source (3, 4, 5, 6, 7) N-chG1DS2PS34567DTAB
* AEC-Q101 qualified
* Very low RDS(on) over the entire temperature range
* High speed swit

SCT040HU120G3AG Applications

* DC/DC converter for EV/HEV
* Main inverter (electric traction)

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Datasheet Details

Part number: SCT040HU120G3AG
Manufacturer: STMicroelectronics ↗
File Size: 619.21 KB
Datasheet: SCT040HU120G3AG-STMicroelectronics.pdf
Description: Automotive-grade silicon carbide Power MOSFET

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Automotive-grade silicon carbide Power MOSFET STMicroelectronics

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