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SCT040W120G3-4AG Datasheet, STMicroelectronics

SCT040W120G3-4AG mosfet equivalent, automotive-grade silicon carbide power mosfet.

SCT040W120G3-4AG Avg. rating / M : 1.0 rating-13

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SCT040W120G3-4AG Datasheet

Features and benefits

Order code SCT040W120G3-4AG VDS 1200 V RDS(on) typ. 40 mΩ ID 40 A HiP247-4 2 34 1 Drain(1, TAB)
* AEC-Q101 qualified
* Very low RDS(on) over the entire t.

Application

Power source(2) ND1TPS2DS3G4
* Main inverter (electric traction)
* DC/DC converter for EV/HEV
* On board c.

Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very hig.

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TAGS

SCT040W120G3-4AG
Automotive-grade
silicon
carbide
Power
MOSFET
SCT040W120G3AG
SCT040W65G3-4
SCT040H120G3-7
STMicroelectronics

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