SCT040W120G3-4AG mosfet equivalent, automotive-grade silicon carbide power mosfet.
Order code SCT040W120G3-4AG
VDS 1200 V
RDS(on) typ. 40 mΩ
ID 40 A
HiP247-4
2 34 1
Drain(1, TAB)
* AEC-Q101 qualified
*
Very low RDS(on) over the entire t.
Power source(2)
ND1TPS2DS3G4
* Main inverter (electric traction)
* DC/DC converter for EV/HEV
* On board c.
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very hig.
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