SCT040TO65G3 datasheet, mosfet equivalent, STMicroelectronics

Features and benefits

TO-LL Order code VDS RDS(on) typ. ID SCT040TO65G3 650 V 40 mΩ 35 A
* Very fast and robust intrinsic body diode
* Very low RDS(on) over the entire temp.

Application

* Switching mode power supply
* DC-DC converters Description Power source (3, 4, 5, 6, 7, 8) N-chG1DS2PS34567.

Description

Power source (3, 4, 5, 6, 7, 8) N-chG1DS2PS34567DTAB This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire tempera.

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