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SCT027W65G3-4AG Datasheet, STMicroelectronics

SCT027W65G3-4AG mosfet equivalent, automotive-grade silicon carbide power mosfet.

SCT027W65G3-4AG Avg. rating / M : 1.0 rating-11

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SCT027W65G3-4AG Datasheet

Features and benefits

Order code SCT027W65G3-4AG VDS 650 V RDS(on) typ. 29 mΩ ID 60 A HiP247-4 2 34 1 Drain(1, TAB)
* AEC-Q101 qualified
* Very low RDS(on) over the entire tem.

Application

Power source(2) ND1TPS2DS3G4
* Main inverter (electric traction)
* DC/DC converter for EV/HEV
* On board c.

Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very hig.

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TAGS

SCT027W65G3-4AG
Automotive-grade
silicon
carbide
Power
MOSFET
SCT027H65G3AG
SCT020H120G3AG
SCT020HU120G3AG
STMicroelectronics

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