Order code SCT027W65G3-4AG VDS 650 V RDS(on) typ. 29 mΩ ID 60 A HiP247-4 2 34 1 Drain(1, TAB)
* AEC-Q101 qualified
* Very low RDS(on) over the entire tem.

Power source(2) ND1TPS2DS3G4
* Main inverter (electric traction)
* DC/DC converter for EV/HEV
* On board c.

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very hig.

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