SCT025H120G3AG - Automotive-grade silicon carbide Power MOSFET

STMicroelectronics

Datasheet Details

Part number	SCT025H120G3AG
Manufacturer	STMicroelectronics ↗
File Size	364.80 KB
Description	Automotive-grade silicon carbide Power MOSFET
Datasheet	SCT025H120G3AG-STMicroelectronics.pdf

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology.

Order code SCT025H120G3AG VDS 1200 V RDS(on) typ. 27 mΩ ID 55 A.
AEC-Q101 qualified.
Very low RDS(on) over the entire temperature range.
High speed switching performances.
Very fast and robust intrinsic body diode.
Source sensing pin for increased efficiency Gate (1) Driver source (2) Power source (3, 4, 5, 6, 7) N-chG1DS2PS34567DTAB.

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Published: Mar 1, 2023 |