Datasheet Details
| Part number | SCT027W65G3-4AG |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 192.71 KB |
| Description | Automotive-grade silicon carbide Power MOSFET |
| Datasheet |
 SCT027W65G3-4AG Datasheet
|
|
|
General Description
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology.
Key Features
- Order code SCT027W65G3-4AG VDS 650 V RDS(on) typ. 29 mΩ ID 60 A HiP247-4 2 34 1 Drain(1, TAB).
- AEC-Q101 qualified.
- Very low RDS(on) over the entire temperature range.
- High speed switching performances.
- Very fast and robust intrinsic body diode.
- Very high operating junction temperature capability (TJ = 200 °C).
- Source sensing pin for increased efficiency Gate(4) Driver source(3).