SCT027H65G3AG mosfet equivalent, automotive-grade silicon carbide power mosfet.
Order code SCT027H65G3AG
VDS 650 V
RDS(on) typ. 29 mΩ
ID 60 A
* AEC-Q101 qualified
* Very low RDS(on) over the entire temperature range
* High speed switc.
* Main inverter (electric traction)
* DC/DC converter for EV/HEV
* On board charger (OBC)
Description
This s.
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high.
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