SCT020HU120G3AG Datasheet Automotive-grade silicon carbide Power MOSFET

Manufacturer: STMicroelectronics

Overview: SCT020HU120G3AG Datasheet Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mΩ typ.

SCT020HU120G3AG automotive-grade silicon carbide power mosfet by STMicroelectronics - Datasheet Preview

Datasheet Details

Part number	SCT020HU120G3AG
Manufacturer	STMicroelectronics
File Size	593.81 KB
Description	Automotive-grade silicon carbide Power MOSFET
Download	SCT020HU120G3AG Download (PDF)

General Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology.

The device

Key Features

Order code SCT020HU120G3AG VDS 1200 V RDS(on) typ. 18.5 mΩ ID 100 A.
AEC-Q101 qualified.
Very low RDS(on) over the entire temperature range.
High speed switching performances.
Very fast and robust intrinsic body diode.
Source sensing pin for increased efficiency.

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