Datasheet Summary
Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mΩ typ., 100 A in an HU3PAK package
Gate (1) Driver source (2)
7 1 HU3PAK
Drain (TAB)
Power source (3, 4, 5, 6, 7)
N-chG1DS2PS34567DTAB
Features
Order code SCT020HU120G3AG
VDS 1200 V
RDS(on) typ. 18.5 mΩ
ID 100 A
- AEC-Q101 qualified
- Very low RDS(on) over the entire temperature range
- High speed switching performances
- Very fast and robust intrinsic body diode
- Source sensing pin for increased efficiency
Applications
- Main inverter (electric traction)
- DC/DC converter for EV/HEV
- On board charger (OBC)
Description
This silicon carbide Power MOSFET device has been developed using ST’s...