SCT020W120G3-4AG - Automotive-grade silicon carbide Power MOSFET

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STMicroelectronics

Part number	SCT020W120G3-4AG
Manufacturer	STMicroelectronics
File Size	196.41 KB
Description	Automotive-grade silicon carbide Power MOSFET
Datasheet	SCT020W120G3-4AG Datasheet
Additional preview pages of the SCT020W120G3-4AG datasheet.

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology.

Order code SCT020W120G3-4AG VDS 1200 V RDS(on) typ. 18.5 mΩ ID 100 A HiP247-4 2 34 1 Drain(1, TAB).
AEC-Q101 qualified.
Very low RDS(on) over the entire temperature range.
High speed switching performances.
Very fast and robust intrinsic body diode.
Very high operating junction temperature capability (TJ = 200 °C).
Source sensing pin for increased efficiency Gate(4) Driver source(3).

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Published: Sep 21, 2024 |