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SCT020W120G3-4AG Datasheet Automotive-grade silicon carbide Power MOSFET

Manufacturer: STMicroelectronics

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General Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology.

The device

Overview

SCT020W120G3-4AG Datasheet Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mΩ typ.

Key Features

  • Order code SCT020W120G3-4AG VDS 1200 V RDS(on) typ. 18.5 mΩ ID 100 A HiP247-4 2 34 1 Drain(1, TAB).
  • AEC-Q101 qualified.
  • Very low RDS(on) over the entire temperature range.
  • High speed switching performances.
  • Very fast and robust intrinsic body diode.
  • Very high operating junction temperature capability (TJ = 200 °C).
  • Source sensing pin for increased efficiency Gate(4) Driver source(3).

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