SCT025W120G3AG datasheet, mosfet equivalent, STMicroelectronics

SCT025W120G3AG mosfet equivalent, automotive-grade silicon carbide power mosfet.

Features and benefits

Order code SCT025W120G3AG VDS 1200 V RDS(on) typ. 27 mΩ ID 56 A HiP247 3 2 1 D(2, TAB)
* AEC-Q101 qualified
* Very low RDS(on) over the entire temperatur.

Application

* Main inverter (electric traction)
* DC/DC converter for EV/HEV G(1)
* On board charger (OBC) Descript.

Description

S(3) AM01475v1_noZen This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low cap.

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