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RF5L08350CB4 Datasheet, STMicroelectronics

RF5L08350CB4 transistor equivalent, rf power ldmos transistor.

RF5L08350CB4 Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 1.15MB)

RF5L08350CB4 Datasheet
RF5L08350CB4
Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 1.15MB)

RF5L08350CB4 Datasheet

Features and benefits

Order code Frequency VDD POUT Gain Efficiency RF5L08350CB4 860 MHz 50 V 400 W 19 dB 61%
* High efficiency and linear gain operations
* Integrated ESD.

Application


* Wideband lab amplifier from 0.4 to 1 GHz
* Digital UHF TV 470-860 MHz
* 650 MHz particle accelerator
*.

Description

The RF5L08350CB4 is a 400 W, 50 V high-performance, internally matched LDMOS FET, designed for multiple applications over the frequency band 0.4 to 1 GHz. Product status link RF5L08350CB4 Product summary Order code RF5L08350CB4 Marking 5L08350 .

Image gallery

RF5L08350CB4 Page 1 RF5L08350CB4 Page 2 RF5L08350CB4 Page 3

TAGS

RF5L08350CB4
Power
LDMOS
transistor
STMicroelectronics

Manufacturer


STMicroelectronics (https://www.st.com/)

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