RF5L051K0CB4 transistor equivalent, rf power ldmos transistor.
Order code
Frequency
VDD
POUT
Gain Efficiency
RF5L051K0CB4
108 MHz
50 V
1000 W
21 dB
77%
* High efficiency and linear gain operations
* Integrated ESD.
* 30-88 MHz/136-174 MHz ground communication
* 1.6-30 MHz HF transceiver
* Plasma generator
* Particle a.
The RF5L051K0CB4 is a 1000 W, 50 V, high performance, unmatched LDMOS FET, designed for wideband commercial and industrial applications in the frequency range from HF to 500 MHz. It can be used for both CW and pulse application. It is featured for hi.
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