logo

RF5L051K0CB4 Datasheet, STMicroelectronics

RF5L051K0CB4 transistor equivalent, rf power ldmos transistor.

RF5L051K0CB4 Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 1.02MB)

RF5L051K0CB4 Datasheet
RF5L051K0CB4
Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 1.02MB)

RF5L051K0CB4 Datasheet

Features and benefits

Order code Frequency VDD POUT Gain Efficiency RF5L051K0CB4 108 MHz 50 V 1000 W 21 dB 77%
* High efficiency and linear gain operations
* Integrated ESD.

Application


* 30-88 MHz/136-174 MHz ground communication
* 1.6-30 MHz HF transceiver
* Plasma generator
* Particle a.

Description

The RF5L051K0CB4 is a 1000 W, 50 V, high performance, unmatched LDMOS FET, designed for wideband commercial and industrial applications in the frequency range from HF to 500 MHz. It can be used for both CW and pulse application. It is featured for hi.

Image gallery

RF5L051K0CB4 Page 1 RF5L051K0CB4 Page 2 RF5L051K0CB4 Page 3

TAGS

RF5L051K0CB4
power
LDMOS
transistor
STMicroelectronics

Manufacturer


STMicroelectronics (https://www.st.com/)

Related datasheet

RF5L051K4CB4

RF5L051K5CB4

RF5L052K0CB4

RF5L052K0CF4

RF5L05500CB4

RF5L05750CF2

RF5L05950CF2

RF5L08350CB4

RF5L08600CB4

RF5L0912750CB4

RF5L10111K0CB4

RF5L1214750CB4

RF5L15030CB2

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts