RF5L05950CF2 transistor equivalent, rf power ldmos transistor.
Order code
Frequency
VDD
POUT
Gain Efficiency
RF5L05950CF2(1)
108 MHz
50 V
2000 W
20 dB
76%
1. Measured on 88-108 MHz wideband test board with two RF5L05950CF.
* 30-88 MHz/136-174 MHz ground communication
* 1.6-30 MHz HF transceiver
* Plasma generator
* Particle a.
The RF5L05950CF2 is a 950 W, 50 V, high performance, unmatched LDMOS FET, designed for wideband commercial and industrial applications in the frequency range from HF to 500 MHz. It can be used for both CW and pulse application. It is featured for hig.
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 722.49KB)