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RF5L08600CB4 Datasheet, STMicroelectronics

RF5L08600CB4 transistor equivalent, rf power ldmos transistor.

RF5L08600CB4 Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 1.98MB)

RF5L08600CB4 Datasheet

Features and benefits

Order code Frequency VDD POUT Gain Efficiency RF5L08600CB4 650 MHz 50 V 650 W 19.5 dB 67%
* High efficiency and linear gain operations
* Integrated ES.

Application


* Wideband lab amplifier from 0.4 to 1 GHz
* Digital UHF TV 470-860 MHz
* 650 MHz particle accelerator
*.

Description

The RF5L08600CB4 is a 650 W, 50 V, high performance, internally matched LDMOS FET, designed for multiple applications in the frequency range from 0.4 to 1 GHz. Product status link RF5L08600CB4 Product summary Order code RF5L08600CB4 Marking 5L0.

Image gallery

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TAGS

RF5L08600CB4
power
LDMOS
transistor
STMicroelectronics

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