P4NM60 mosfet equivalent, n-channel power mosfet.
Type
VDSS
RDS(on)
(@Tjmax) max
)STD3NM60
t(sSTD3NM60-1 650 < 1.5 Ω
cSTP4NM60
ID 3A 4A
PW 42 W 69 W
rodu
* High dv/dt and avalanche capabilities te P
* Imp.
c
* Switching roduDescription PModems technology applies the benefits of the temultiple drain process to STMicroelect.
PModems technology applies the benefits of the temultiple drain process to STMicroelectronics' well-
known PowerMESH™ horizontal layout structure.
leThe resulting product offers low on-resistance, sohigh dv/dt capability and excellent avalanche Obcha.
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