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P4NA60FI - STP4NA60FI

Description

This series of POWER MOSFETS represents the most advanced high voltage technology.

The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance.

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Datasheet Details

Part number P4NA60FI
Manufacturer STMicroelectronics
File Size 235.84 KB
Description STP4NA60FI
Datasheet download datasheet P4NA60FI Datasheet
Additional preview pages of the P4NA60FI datasheet.

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Full PDF Text Transcription

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www.DataSheet4U.com STP4NA60 STP4NA60FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STP4NA60 STP4NA60FI s s s s s s s V DSS 600 V 600 V R DS( on) < 2.2 Ω < 2.2 Ω ID 4.3 A 2.7 A TYPICAL RDS(on) = 1.85 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE GHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD TO-220 3 1 2 1 2 3 DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance.
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