P4N60 - SSP4N60

Fairchild Semiconductor

Datasheet Details

Part number	P4N60
Manufacturer	Fairchild Semiconductor
File Size	290.43 KB
Description	SSP4N60
Datasheet	P4N60_FairchildSemiconductor.pdf

Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µ A (Max. ) @ VDS = 600V Lower RDS(ON) : 2.037 Ω (Typ. ) SSP4N60AS BVDSS = 600 V RDS(on) = 2.5 Ω ID = 4 A TO-220 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 oC) Dr.

📁 P4N60 Similar Datasheet

Other Datasheets by Fairchild Semiconductor

Published: Mar 12, 2008 |