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P4N60 Datasheet

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Fairchild Semiconductor · P4N60 File Size : 290.43KB · 1 hits

Features and Benefits

Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µ A (Max.) @ VDS = 600V Lower RDS(ON) : 2.037 Ω (Typ.) SSP4N60AS BVDSS = 600 V RDS(on) = 2.5 Ω ID = 4 A TO-220 1 2 3 1.Gate 2. Drain 3. Sou.

P4N60 P4N60 P4N60
TAGS
SSP4N60
P4N60
P4N05L
P4N150
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