P4N150 mosfet equivalent, n-channel mosfet.
Type
VDSS RDS(on) max ID
Pw
STFW4N150 1500 V
<7Ω
4 A 63 W
STP4N150 1500 V
<7Ω
4 A 160 W
STW4N150 1500 V
<7Ω
4 A 160 W
* 100% avalanche tested
* Intri.
Description
Using the well consolidated high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advance.
Using the well consolidated high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of very high voltage Power MOSFETs with outstanding performances. The strengthened layout coupled with the company’s proprietary edge .
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