Datasheet Summary
STP4NA40 STP4NA40FI
- CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
TYPE STP4NA40 STP4NA40FI s s s s s s s
V DSS 400 V 400 V
R DS( on) < 2Ω < 2Ω
ID 4A 2.8 A
TYPICAL RDS(on) = 1.7 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE GHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD TO-220
3 1 2 1 2
DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. APPLICATIONS HIGH CURRENT,...