Datasheet Details
| Part number | P4NA40F1 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 198.86 KB |
| Description | STP4NA40F1 |
| Datasheet | P4NA40F1 STP-4NA Datasheet (PDF) |
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Overview: STP4NA40 STP4NA40FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STP4NA40 STP4NA40FI s s s s s s s V DSS 400 V 400 V R DS( on) < 2Ω < 2Ω ID 4A 2.8 A TYPICAL RDS(on) = 1.
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | P4NA40F1 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 198.86 KB |
| Description | STP4NA40F1 |
| Datasheet | P4NA40F1 STP-4NA Datasheet (PDF) |
|
|
|
This series of POWER MOSFETS represents the most advanced high voltage technology.
The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance.
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE s ISOWATT220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter STP4NA40 VD S V DG R V GS ID ID ID M( •) P tot V ISO T stg Tj Drain-source Voltage (V GS = 0) Drain-gate Voltage (RG S = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 oC Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max.
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