GWA75H65DRFB2AG datasheet, igbt equivalent, STMicroelectronics

Features and benefits

TO-247 long leads C(2, TAB) G(1) E(3) NG1E3C2T
* AEC-Q101 qualified
* Maximum junction temperature: TJ = 175 °C
* Low VCE(sat) = 1.6 V (typ.) @ IC = 75 .

Application

* DC/DC converter for EV/HEV
* On board charger (OBC) Description The newest IGBT 650 V HB2 series represents.

Description

The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performances are optimized both in conduction and switching energies for hard switching application. In this configuration, it.

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