GW30N120KD igbt equivalent, short circuit rugged igbt.
* Low on-losses
* High current capability
* Low gate charge
* Short circuit withstand time 10 µs
* IGBT co-packaged with Ultrafast free-wheeling
diode.
* Motor control
Description
This high voltage and short-circuit rugged IGBT utilizes the advanced PowerMESH™ process.
This high voltage and short-circuit rugged IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low ON-state behavior.
3 2 1
TO-247
Figure 1. Internal schematic diagram
Table 1. Device .
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