GW100N30 datasheet, igbt equivalent, STMicroelectronics

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Features and benefits

* Optimized for sustain and energy recovery circuits in PDP applications.
* State-of-the-art STripFET™ technology
* Peak collector current IRP = 330 A @ TC .

Application

* State-of-the-art STripFET™ technology
* Peak collector current IRP = 330 A @ TC = 25 °C (see Table 2) 3 2 1.

Description

duAdvanced high-density and high-current IGBT rotechnology with low-drop companion diode Padapted to various functions in PDP sets. 3 2 1 TO-220 Figure 1. Internal schematic diagram lete Product(s) - ObsoleteTable 1. Device summary soOrder codes Ob.

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