GWA30N120KD Datasheet, STMicroelectronics

* Low on-losses
* High current capability
* Low gate charge
* Short circuit withstand time 10 µs
* IGBT co-packaged with Ultrafast free-wheeling diode.

* Motor control Description This high voltage and short-circuit rugged IGBT utilizes the advanced PowerMESH™ process.

This high voltage and short-circuit rugged IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low ON-state behavior. 3 2 1 TO-247 Figure 1. Internal schematic diagram Table 1. Device .