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GWA40MS120DF4AG - IGBT

Description

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.

Features

  • AEC-Q101 qualified.
  • 8 μs of short-circuit withstand time at VCC = 800 V, VGE = 15 V, TJ (start) = 175 °C.
  • VCE(sat) = 1.95 V (typ. ) @ IC = 40 A.
  • Tight parameter distribution.
  • Positive VCE(sat) temperature coefficient.
  • Low thermal resistance.

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GWA40MS120DF4AG Datasheet Automotive-grade trench gate field-stop, 1200 V, 40 A, low-loss MS series IGBT in a TO-247 long leads package TO-247 long leads Features • AEC-Q101 qualified • 8 μs of short-circuit withstand time at VCC = 800 V, VGE = 15 V, TJ (start) = 175 °C • VCE(sat) = 1.95 V (typ.) @ IC = 40 A • Tight parameter distribution • Positive VCE(sat) temperature coefficient • Low thermal resistance Applications • Auxiliary loads • Thermal management • PTC heaters Description This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the MS series IGBTs, which represent an evolution of low-loss M series specifically designed for inverter system thanks to the outstanding short-circuit capability at high bus voltage value.
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