GWA40MS120DF4AG igbt equivalent, igbt.
* AEC-Q101 qualified
* 8 μs of short-circuit withstand time at VCC = 800 V, VGE = 15 V,
TJ (start) = 175 °C
* VCE(sat) = 1.95 V (typ.) @ IC = 40 A
* Tight.
* Auxiliary loads
* Thermal management
* PTC heaters
Description
This device is an IGBT developed using an a.
This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the MS series IGBTs, which represent an evolution of low-loss M series specifically designed for inverter system thanks to the outst.
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