GWA40MS120DF4AG - IGBT

STMicroelectronics

Datasheet Details

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure..

AEC-Q101 qualified.
8 μs of short-circuit withstand time at VCC = 800 V, VGE = 15 V, TJ (start) = 175 °C.
VCE(sat) = 1.95 V (typ. ) @ IC = 40 A.
Tight parameter distribution.
Positive VCE(sat) temperature coefficient.
Low thermal resistance.

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