GWA40MS120DF4AG datasheet, igbt equivalent, STMicroelectronics

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Features and benefits

* AEC-Q101 qualified
* 8 μs of short-circuit withstand time at VCC = 800 V, VGE = 15 V, TJ (start) = 175 °C
* VCE(sat) = 1.95 V (typ.) @ IC = 40 A
* Tight.

Application

* Auxiliary loads
* Thermal management
* PTC heaters Description This device is an IGBT developed using an a.

Description

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the MS series IGBTs, which represent an evolution of low-loss M series specifically designed for inverter system thanks to the outst.

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