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SW10N60K - N-channel MOSFET

General Description

This power MOSFET is produced with advanced super-junction technology of SAMWIN.

This technology enable power MOSFET to have better characteristics, such as fasts witching time, excellent avalanche characteristics, low gate charge and especially in low on resistance.

Key Features

  • High ruggedness.
  • RDS(ON) (Max 0.5Ω)@VGS=10V.
  • Gate Charge (Typical 26nC).
  • Improved dv/dt Capability.
  • 100% Avalanche Tested TO-220F 1 2 3 BVDSS : 600V ID : 10.0A RDS(ON) : 0.5ohm 2 1. Gate 2. Drain 3. Source General.

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Datasheet Details

Part number SW10N60K
Manufacturer SAMWIN
File Size 374.81 KB
Description N-channel MOSFET
Datasheet download datasheet SW10N60K Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SAMWIN SW10N60K N-channel MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 0.5Ω)@VGS=10V ■ Gate Charge (Typical 26nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested TO-220F 1 2 3 BVDSS : 600V ID : 10.0A RDS(ON) : 0.5ohm 2 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced super-junction technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fasts witching time, excellent avalanche characteristics, low gate charge and especially in low on resistance. It is mainly suitable for half bridge or full bridge resonant topology like a electronic ballast, and also low power switching mode power appliances.