SW10N60K mosfet equivalent, n-channel mosfet.
* High ruggedness
* RDS(ON) (Max 0.5Ω)@VGS=10V
* Gate Charge (Typical 26nC)
* Improved dv/dt Capability
* 100% Avalanche Tested
TO-220F 1 2 3
BVDSS .
This power MOSFET is produced with advanced super-junction technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fasts witching time, excellent avalanche characteristics, low gate charge and especially in l.
Image gallery
TAGS
Download (Size : 374.81KB)