RU1HE12L datasheet, mosfet equivalent, Ruichips

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Features and benefits

* 100V/12A, RDS (ON) =145mΩ(Typ.)@VGS=10V RDS (ON) =160mΩ(Typ.)@VGS=4.5V
* Super High Dense Cell Design
* ESD protected
* Reliable and Rugged
* 100% a.

Application

* Converters Pin Description TO252 N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (.

Description

TO252 N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode C.

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