NP16N06QLK Datasheet, Renesas

* Super low on-state resistance  RDS(on)1 = 39 m MAX. (VGS = 10 V, ID = 8 A)  RDS(on)2 = 60 m MAX. (VGS = 4.5 V, ID = 4 A)
* Low Ciss: Ciss = 500 pF TYP. (VDS.

Features
* Super low on-state resistance  RDS(on)1 = 39 m MAX. (VGS = 10 V, ID = 8 A)  RDS(on)2 = 60 m MAX. (VG.

NP16N06QLK is a dual N-channel MOS Field Effect Transistor designed for high current switching applications. Features
* Super low on-state resistance  RDS(on)1 = 39 m MAX. (VGS = 10 V, ID = 8 A)  RDS(on)2 = 60 m MAX. (VGS = 4.5 V, ID = 4 A) <.