NP16N04YUG datasheet, transistor equivalent, Renesas

Features and benefits

* Low on-state resistance ⎯ RDS(on) = 25 mΩ MAX. (VGS = 10 V, ID = 8 A)
* Low Ciss: Ciss = 740 pF TYP. (VDS = 25 V, VGS = 0 V)
* Designed for automotive appli.

Application

Features
* Low on-state resistance ⎯ RDS(on) = 25 mΩ MAX. (VGS = 10 V, ID = 8 A)
* Low Ciss: Ciss = 740 pF TYP..

Description

The NP16N04YUG is N-channel MOS Field Effect Transistor designed for high current switching applications. Features
* Low on-state resistance ⎯ RDS(on) = 25 mΩ MAX. (VGS = 10 V, ID = 8 A)
* Low Ciss: Ciss = 740 pF TYP. (VDS = 25 V, VGS = 0 V) .

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