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NP16N04YUG - MOS FIELD EFFECT TRANSISTOR

Description

The NP16N04YUG is N-channel MOS Field Effect Transistor designed for high current switching applications.

Features

  • Low on-state resistance ⎯ RDS(on) = 25 mΩ MAX. (VGS = 10 V, ID = 8 A).
  • Low Ciss: Ciss = 740 pF TYP. (VDS = 25 V, VGS = 0 V).
  • Designed for automotive.

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Datasheet Details

Part number NP16N04YUG
Manufacturer Renesas
File Size 213.42 KB
Description MOS FIELD EFFECT TRANSISTOR
Datasheet download datasheet NP16N04YUG Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NP16N04YUG MOS FIELD EFFECT TRANSISTOR Preliminary Data Sheet R07DS0362EJ0100 Rev.1.00 Jun 13, 2011 Description The NP16N04YUG is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS(on) = 25 mΩ MAX. (VGS = 10 V, ID = 8 A) • Low Ciss: Ciss = 740 pF TYP. (VDS = 25 V, VGS = 0 V) • Designed for automotive application and AEC-Q101 qualified • Small size package 8-pin HSON Ordering Information Part No. NP16N04YUG-E1-AY ∗1 NP16N04YUG-E2-AY ∗1 Lead Plating Pure Sn (Tin) Packing Tape 2500 p/reel Taping (E1 type) Taping (E2 type) Note: ∗1. Pb-free (This product does not contain Pb in the external electrode.
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