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NP160N04TDG - SWITCHING N-CHANNEL POWER MOS FET

Description

The NP160N04TDG is N-channel MOS Field Effect Transistor designed for high current switching applications.

PACKAGE TO-263-7pin (MP-25ZT) typ.

Features

  • Super low on-state resistance RDS(on)1 = 1.6 mΩ TYP. / 2.0 mΩ MAX. (VGS = 10 V, ID = 80 A) RDS(on)2 = 2.2 mΩ TYP. / 5.4 mΩ MAX. (VGS = 4.5 V, ID = 80 A).
  • High Current Rating ID(DC) = ±160 A.
  • Logic level drive type (TO-263-7pin).

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Datasheet Details

Part number NP160N04TDG
Manufacturer NEC
File Size 311.82 KB
Description SWITCHING N-CHANNEL POWER MOS FET
Datasheet download datasheet NP160N04TDG Datasheet

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www.DataSheet4U.com DATA SHEET MOS FIELD EFFECT TRANSISTOR NP160N04TDG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP160N04TDG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP160N04TDG-E1-AY NP160N04TDG-E2-AY Note Note LEAD PLATING Pure Sn (Tin) PACKING Tape 800 p/reel PACKAGE TO-263-7pin (MP-25ZT) typ. 1.5 g Note Pb-free (This product does not contain Pb in the external electrode). FEATURES • Super low on-state resistance RDS(on)1 = 1.6 mΩ TYP. / 2.0 mΩ MAX. (VGS = 10 V, ID = 80 A) RDS(on)2 = 2.2 mΩ TYP. / 5.4 mΩ MAX. (VGS = 4.
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