logo

NP160N055TUK Datasheet, Renesas

NP160N055TUK transistor equivalent, mos field effect transistor.

NP160N055TUK Avg. rating / M : 1.0 rating-11

datasheet Download

NP160N055TUK Datasheet

Features and benefits


* Super low on-state resistance RDS(on) = 2.10 m MAX. (VGS = 10 V, ID = 80 A)
* Low Ciss: Ciss = 7500 pF TYP. (VDS = 25 V)
* Designed for automotive applicat.

Application

Features
* Super low on-state resistance RDS(on) = 2.10 m MAX. (VGS = 10 V, ID = 80 A)
* Low Ciss: Ciss = 7500.

Description

The NP160N055TUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features
* Super low on-state resistance RDS(on) = 2.10 m MAX. (VGS = 10 V, ID = 80 A)
* Low Ciss: Ciss = 7500 pF TYP. (VDS = 25 V) <.

Image gallery

NP160N055TUK Page 1 NP160N055TUK Page 2 NP160N055TUK Page 3

TAGS

NP160N055TUK
MOS
FIELD
EFFECT
TRANSISTOR
NP160N04TDG
NP160N04TUG
NP160N04TUJ
Renesas

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts