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NP160N04TUJ - MOS FIELD EFFECT TRANSISTOR

Description

The NP160N04TUJ is N-channel MOS Field Effect Transistor designed for high current switching applications.

Features

  • Low on-state resistance ⎯ RDS(on) = 2.0 mΩ MAX. (VGS = 10 V, ID = 80 A).
  • Low Ciss: Ciss = 6900 pF TYP. (VDS = 25 V, VGS = 0 V).
  • Designed for automotive.

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Datasheet Details

Part number NP160N04TUJ
Manufacturer Renesas
File Size 191.21 KB
Description MOS FIELD EFFECT TRANSISTOR
Datasheet download datasheet NP160N04TUJ Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NP160N04TUJ MOS FIELD EFFECT TRANSISTOR Preliminary Data Sheet R07DS0021EJ0100 Rev.1.00 Jul 01, 2010 Description The NP160N04TUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS(on) = 2.0 mΩ MAX. (VGS = 10 V, ID = 80 A) • Low Ciss: Ciss = 6900 pF TYP. (VDS = 25 V, VGS = 0 V) • Designed for automotive application and AEC-Q101 qualified Ordering Information Part No. NP160N04TUJ -E1-AY ∗1 NP160N04TUJ -E2-AY ∗1 LEAD PLATING Pure Sn (Tin) PACKING Tape 800 pcs/reel Note: ∗1. Pb-free (This product does not contain Pb in the external electrode.
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