NP160N04TUJ datasheet, transistor equivalent, Renesas

Features and benefits

* Low on-state resistance ⎯ RDS(on) = 2.0 mΩ MAX. (VGS = 10 V, ID = 80 A)
* Low Ciss: Ciss = 6900 pF TYP. (VDS = 25 V, VGS = 0 V)
* Designed for automotive ap.

Application

Features
* Low on-state resistance ⎯ RDS(on) = 2.0 mΩ MAX. (VGS = 10 V, ID = 80 A)
* Low Ciss: Ciss = 6900 pF T.

Description

The NP160N04TUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features
* Low on-state resistance ⎯ RDS(on) = 2.0 mΩ MAX. (VGS = 10 V, ID = 80 A)
* Low Ciss: Ciss = 6900 pF TYP. (VDS = 25 V, VGS = 0.

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