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NP110N055PUJ Datasheet, Renesas

NP110N055PUJ fet equivalent, n-channel power mos fet.

NP110N055PUJ Avg. rating / M : 1.0 rating-14

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NP110N055PUJ Datasheet

Features and benefits


* Super low on-state resistance RDS(on) = 2.4 mΩ MAX. (VGS = 10 V, ID = 55 A)
* Low input capacitance Ciss = 9500 pF TYP.
* Designed for automotive applicatio.

Application

ORDERING INFORMATION PART NUMBER NP110N055PUJ-E1B-AY Note NP110N055PUJ-E2B-AY Note LEAD PLATING Pure Sn (Tin) PACKI.

Description

The NP110N055PUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP110N055PUJ-E1B-AY Note NP110N055PUJ-E2B-AY Note LEAD PLATING Pure Sn (Tin) PACKING Tape 1000 p/reel No.

Image gallery

NP110N055PUJ Page 1 NP110N055PUJ Page 2 NP110N055PUJ Page 3

TAGS

NP110N055PUJ
N-CHANNEL
POWER
MOS
FET
Renesas

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