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NP110N04PDG - N-CHANNEL POWER MOS FET

Description

The NP110N04PDG is N-channel MOS Field Effect Transistor designed for high current switching applications.

Features

  • Channel temperature 175 degree rating.
  • Super low on-state resistance RDS(on)1 = 1.8 mΩ MAX. (VGS = 10 V, ID = 55 A) RDS(on)2 = 3.2 mΩ MAX. (VGS = 4.5 V, ID = 55 A) (TO-263).

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Full PDF Text Transcription

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DATA SHEET MOS FIELD EFFECT TRANSISTOR NP110N04PDG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP110N04PDG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER LEAD PLATING NP110N04PDG-E1-AZ Note Pure Sn (Tin) NP110N04PDG-E2-AZ Note Note See “TAPE INFORMATION” PACKING Tape 800 p/reel PACKAGE TO-263 (MP-25ZP) typ. 1.5 g FEATURES • Channel temperature 175 degree rating • Super low on-state resistance RDS(on)1 = 1.8 mΩ MAX. (VGS = 10 V, ID = 55 A) RDS(on)2 = 3.2 mΩ MAX. (VGS = 4.
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