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PNM8P30V12 Datasheet Preview

PNM8P30V12 Datasheet

N-Channel MOSFET

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Description
The N-channel MOSFET has been designed specifically to improve the
overall efficiency of DC/DC converters using either synchronous or
conventional switching PWM controllers. It has been optimized for low gate
charge, low on-resistance and fast switching speed.
PNM8P30V12
N-Channel MOSFET
D5678
VDS(V)
30
MOSFET Product Summary
RDS(on)(mΩ)
ID(A)
12@ VGS=10V
17@ VGS=4.5V
12.0
G4
S123
Electrical characteristics per line@25( unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
Static Drain-Source On-Resistance
Drain-Source Diode Forward Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-Off Delay Time
Symbol
Conditions
OFF CHARACTERISTICS
BVDSS
IDSS
IGSS
VGS(th)
RDS(ON)
VSD
ID =250μA,VGS=0V
VDS =24V,VGS=0V
VDS =0V,VGS=±20V
VDS =VGS, ID =10mA
VGS=10V, ID =12A
VGS=4.5V, ID =10A
VGS=0V, IS =1A
DYNAMIC PARAMETERS
CISS
CDSS
CRSS
VGS=0V, VDS =15V,
f=1MHz
SWITCHING PARAMETERS
td(on)
td(off)
VDS=15V, VGS =10V,
RL=1.3, RG=3
Min. Typ. Max. Units
30 -
-V
- - 1 μA
-
-
±100
nA
1.0 1.5 2.5
V
- 12 18 m
- 17 24 m
- 0.65 1
V
- 900 1150 pF
- 135
pF
- 100
pF
- 7.5 ns
- 20 ns
Rev.06
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Prisemi

PNM8P30V12 Datasheet Preview

PNM8P30V12 Datasheet

N-Channel MOSFET

No Preview Available !

N-Channel MOSFET
Absolute maximum rating@25
Rating
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Continuous
Pulsed
TA=25
Total Power Dissipation
TA=125
Symbol
VDS
VGS
ID
ID
PD
PD
PNM8P30V12
Value
30
±20
12.0
55
3.2
2.5
Units
V
V
A
A
W
W
Typical Characteristics
100
80 VGS=6.0V
60
VGS=4.0V
40
20 VGS=2.8V
25
20
15
10
5
T=25°C
T=55°C
T=125°C
0
0.0
0.5 1.0 1.5 2.0 2.5 3.0
VDS – Drain Source Voltage (V)
Fig 1. Output Characteristics
3.5 4.0
25
0
0.0
1200
0.5 1.0 1.5 2.0 2.5
VGS – Gate to Source Voltage (V)
Fig 2. Transfer Characteristics
20 VGS=4.5V
Ciss
900
3.0
15 600
10
0.0
0
Rev.06
VGS=10V
2 4 6 8 10
ID – Drain Current (A)
Fig 3. On-Resistance vs. Drain Current
300
COss
CRss
0
0
4
8 12 16
VDS – Drain Source Voltage (V)
Fig 4. Capacitance
20
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Part Number PNM8P30V12
Description N-Channel MOSFET
Maker Prisemi
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