PNM8P30V20
Description
The MOSFET provide the best bination of fast switching, low on-resistance and cost-effectiveness.
VDS(V) 30
MOSFET Product Summary
RDS(on)(mΩ)
ID(A)
3.7@ VGS=4.5V
Top View (SOP-8)
S1 S2 S3 G4
8D 7D 6D 5D
PNM8P30V20 N-Channel 30-V(D-S) MOSFET
Internal Structure
Absolute maximum rating@25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Curren(TJ=150℃) Pulsed Drain Current
TA=25℃ TA=70℃
Maximum Power Dissipation
TA=25℃ TA=70℃
Operating Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Thermal Resistance-Junction to Ambient
Symbol
VDS VGS
Symbol
RθJA
Typical
Maximum
30 ±20 23 18 80 2.72 1.74 -55 to...
