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Description
The PNM8PN03R13 uses advanced trench technology to provide excellent RDS(ON), low gate charge. This device is suitable for use as a load switch or in PWM applications.
VDS(V) 30
MOSFET Product Summary
RDS(on)(mΩ) 10@ VGS = 10V 13@ VGS = 4.5V
ID(A) 39
Feature
High Power and current handing capability Lead free product is acquired Surface Mount Package
Applications
PWM applications Load switch Power management DC-DC Converters Wireless Chargers
Absolute maximum rating@25℃
Rating
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous1) Pulsed Drain Current2)
TC=25℃ TC=100℃
Total Power Dissipation3)
Avalanche Current4)
Avalanche Energy4)
Thermal Resistance Junction-to-Ambient5)
Junction and Storage Temperature Range
Rev.06.
PNM8PN03R13 Datasheet
