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PNM6N20V10E Datasheet Preview

PNM6N20V10E Datasheet

N-Channel MOSFET

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Description
The MOSFET provide the best combination of fast switching,
low on-resistance and cost-effectiveness.
VDS(V)
20
MOSFET Product Summary
RDS(on)(mΩ)
ID(A)
7.5 @ VGS=4.5V
10
PNM6N20V10E
N-Channel MOSFET
Pin 1
Drain
DDG
Source
DDS
DFN2*2-6LBottom View
D1
D2
G3
6 D
5 D
4 S
Internal structure
Absolute maximum rating@25
Rating
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Continuous TA=25
Pulsed (Note 1)
Total Power Dissipation TA=25
ESD (Human Body Model [BM])
Operating and Storage Junction Temperature Range
Thermal Characteristics
Parameter
Thermal Resistance, Junction to Ambient (Note 2)
D) (D) (S
654
2010EDrain
Source
YYWW
123
D) (D) (G
YY =Year Code
WW =Week Code
Marking (Top View)
Symbol
VDS
VGS
ID
IDM
PD
VESD
TJ,TSTG
Value
20
±12
10
30
1.5
2
-55 to 150
Symbol
RθJA
Max.
145
Units
V
V
A
A
W
KV
Units
/W
Rev.06.2
1 www.prisemi.com




Prisemi

PNM6N20V10E Datasheet Preview

PNM6N20V10E Datasheet

N-Channel MOSFET

No Preview Available !

N-Channel MOSFET
Electrical characteristics per line@25( unless otherwise specified)
PNM6N20V10E
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-to-Source Forward Leakage
Gate Threshold Voltage
Symbol
BVDSS
IDSS
IGSS
VGS(th)
Static Drain-Source On-Resistance
RDS(ON)
Maximum Body-Diode Continuous
Current
Forward Trans conductance
Diode Forward Voltage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain(Miller) Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Is
gFS
VSD
Qg
Qgs
Qgd
CISS
CDSS
CRSS
td(on)
tr
td(off)
tf
Conditions
ID =250μA,VGS=0V
VDS =20V,VGS=0V
VGS=±10V
VDS =VGS, ID =250μA
VGS=4.5V, ID =5.5A
VGS=2.5V, ID =5A,
VGS=1.8V, ID =5A,
-
VDS=5V, ID =10A
VGS=0V,IS=2A
VGS=0V,IS=10A
ID =10A, VDS =6V,
VGS =4.5V
VGS=0V, VDS =15V,
f=1MHz
VDS=6V, ID =10A,
VGS=4.5V , RGEN=6Ω,
Min.
20
-
-
0.25
-
-
-
Typ.
-
-
-
0.75
7.5
9.5
15
Max.
-
1.0
±10
1.25
9
12
25
Units
V
μA
μA
V
- - 2.6 A
- 56
- 0.67
- 0.8
- 16
- 2.3
- 3.9
- 980
- 195
- 160
- 6.2
-9
- 45
- 14
-
-
-
-
-
-
-
-
-
-
-
S
V
nC
pF
ns
Note 1: Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 2: Surface Mounted on FR4 Board, t 10 sec.
Rev.06.2
2 www.prisemi.com


Part Number PNM6N20V10E
Description N-Channel MOSFET
Maker Prisemi
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PNM6N20V10E Datasheet PDF






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