Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM100DY-24A
Dual IGBTMOD™ A-Series Module
100 Amperes/1200 Volts
Absolute Maximum Ratings, Tj = 25°C unless otherwise specified
Ratings
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E Short)
Gate-Emitter Voltage (C-E Short)
Collector Current (DC, TC = 84°C*)
Peak Collector Current
Emitter Current*** (TC = 25°C)
Peak Emitter Current***
Maximum Collector Dissipation (TC = 25°C*, Tj ≤ 150°C)
Mounting Torque, M5 Main Terminal
Mounting Torque, M6 Mounting
Weight
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
Symbol
Tj
Tstg
VCES
VGES
IC
ICM
IE
IEM
PC
—
—
—
VISO
CM100DY-24A
–40 to 150
–40 to 125
1200
±20
100
200**
100
200**
672
30
40
310
2500
Units
°C
°C
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
in-lb
in-lb
Grams
Volts
Static Electrical Characteristics, Tj = 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min. Typ. Max. Units
Collector-Cutoff Current
Gate Leakage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Total Gate Charge
Emitter-Collector Voltage**
ICES
VCE = VCES, VGE = 0V
— — 1.0 mA
IGES
VGE = VGES, VCE = 0V
— — 0.5 µA
VGE(th)
IC = 10mA, VCE = 10V
6.0 7.0 8.0 Volts
VCE(sat)
IC = 100A, VGE = 15V, Tj = 25°C
— 2.1 3.0 Volts
IC = 100A, VGE = 15V, Tj = 125°C
— 2.4 — Volts
QG
VCC = 600V, IC = 100A, VGE = 15V — 500 —
nC
VEC
IE = 100A, VGE = 0V
— — 3.8 Volts
Dynamic Electrical Characteristics, Tj = 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min. Typ. Max. Units
Input Capacitance
Cies
—
Output Capacitance
Coes
VCE = 10V, VGE = 0V
—
Reverse Transfer Capacitance
Cres
—
Inductive
Turn-on Delay Time
td(on)
—
Load
Rise Time
tr
VCC = 600V, IC = 100A,
—
Switch
Turn-off Delay Time
td(off)
VGE1 = VGE2 = 15V, RG = 3.1Ω,
—
Time
Fall Time
tf
Inductive Load
—
Diode Reverse Recovery Time***
trr
Switching Operation,
—
Diode Reverse Recovery Charge***
Qrr
IE = 100A
—
*TC, Tf measured point is just under the chips.
**Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating.
***Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
— 17.5 nf
— 1.5 nf
— 0.34 nf
— 100 ns
— 70 ns
— 400 ns
— 350 ns
— 150 ns
5.0 — µC
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