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Powerex Power Semiconductors

CM100DY-24H Datasheet Preview

CM100DY-24H Datasheet

Dual IGBT Module

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Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM100DY-24H
Dual IGBTMOD™
H-Series Module
100 Amperes/1200 Volts
CK
A
B
HE
EH
C2E1
E2
C1
S
G
L
R - M5 THD (3 TYP.)
P - DIA. (2 TYP.)
JJJ
NN
S
.110 TAB
M
D
F
Q
G2
E2
C2E1
E2 C1
E1
G1
Outline Drawing and Circuit Diagram
Dimensions
A
B
C
D
E
F
G
H
J
Inches
3.70
3.150±0.01
1.89
1.18 Max.
0.90
0.83
0.71
0.67
0.62
Millimeters
94.0
80.0±0.25
48.0
30.0 Max.
23.0
21.2
18.0
17.0
16.0
Dimensions
K
L
M
N
P
Q
R
S
Inches
0.51
0.47
0.30
0.28
0.256 Dia.
0.26
M5 Metric
0.16
Millimeters
13.0
12.0
7.5
7.0
Dia. 6.5
6.5
M5
4.0
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of two IGBT Transistors in a half-
bridge configuration with each
transistor having a reverse-
connected super-fast recovery
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offering simplified system assem-
bly and thermal management.
Features:
Low Drive Power
Low VCE(sat)
Discrete Super-Fast Recovery
(135ns) Free-Wheel Diode
High Frequency Operation
(20-25kHz)
Isolated Baseplate for Easy
Heat Sinking
Applications:
AC Motor Control
Motion/Servo Control
UPS
Welding Power Supplies
Laser Power Supplies
Ordering Information:
Example: Select the complete part
module number you desire from
the table below -i.e. CM100DY-24H
is a 1200V (VCES), 100 Ampere
Dual IGBTMOD™ Power Module.
Type Current Rating
VCES
Amperes
Volts (x 50)
CM 100
24
261




Powerex Power Semiconductors

CM100DY-24H Datasheet Preview

CM100DY-24H Datasheet

Dual IGBT Module

No Preview Available !

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM100DY-24H
Dual IGBTMOD™ H-Series Module
100 Amperes/1200 Volts
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings
Symbol
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E SHORT)
Gate-Emitter Voltage
Collector Current
Peak Collector Current
Diode Forward Current
Diode Forward Surge Current
Power Dissipation
Max. Mounting Torque M5 Terminal Screws
Tj
Tstg
VCES
VGES
IC
ICM
IF
IFM
Pd
Max. Mounting Torque M6 Mounting Screws
Module Weight (Typical)
V Isolation
VRMS
* Pulse width and repetition rate should be such that device junction temperature does not exceed the device rating.
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Collector-Cutoff Current
ICES
VCE = VCES, VGE = 0V
Gate Leakage Current
IGES
VGE = VGES, VCE = 0V
Gate-Emitter Threshold Voltage
VGE(th)
IC = 10mA, VCE = 10V
Collector-Emitter Saturation Voltage
VCE(sat)
IC = 100A, VGE = 15V
IC = 100A, VGE = 15V, Tj = 150°C
Total Gate Charge
QG VCC = 600V, IC = 100A, VGS = 15V
Diode Forward Voltage
VFM
IE = 100A, VGS = 0V
** Pulse width and repetition rate should be such that device junction temperature rise is negligible.
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Input Capacitance
Cies
Output Capacitance
Coes
VGE = 0V, VCE = 10V, f = 1MHz
Reverse Transfer Capacitance
Cres
Resistive
Turn-on Delay Time
td(on)
Load
Rise Time
Switch
Turn-off Delay Time
Time
Fall Time
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
tr
td(off)
tf
trr
Qrr
VCC = 600V, IC = 100A,
VGE1 = VGE2 = 15V, RG = 3.1
IE = 100A, diE/dt = –200A/µs
IE = 100A, diE/dt = –200A/µs
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Thermal Resistance, Junction to Case
Rth(j-c)
Per IGBT
Thermal Resistance, Junction to Case
Rth(j-c)
Per FWDi
Contact Thermal Resistance
Rth(c-f)
Per Module, Thermal Grease Applied
262
CM100DY-24H
–40 to 150
–40 to 125
1200
±20
100
200*
100
200*
780
17
26
270
2500
Units
°C
°C
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
in-lb
in-lb
Grams
Volts
Min. Typ. Max. Units
– – 1.0 mA
– – 0.5 µA
4.5 6.0 7.5 Volts
– 2.5 3.4** Volts
– 2.25 – Volts
– 500 –
nC
– – 3.5 Volts
Min. Typ. Max. Units
– – 20 nF
––
7 nF
––
4 nF
– – 250 ns
– – 350 ns
– – 350 ns
– – 350 ns
– – 250 ns
– 0.74 –
µC
Min. Typ. Max. Units
– – 0.16 °C/W
– – 0.35 °C/W
– – 0.065 °C/W


Part Number CM100DY-24H
Description Dual IGBT Module
Maker Powerex Power Semiconductors
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CM100DY-24H Datasheet PDF






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