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Mitsubishi Electric Semiconductor

CM100DY-12H Datasheet Preview

CM100DY-12H Datasheet

IGBT Module

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MITSUBISHI IGBT MODULES
CM100DY-12H
HIGH POWER SWITCHING USE
INSULATED TYPE
DM
E
A
B
F
C
F
K
C2E1
E2
(3 TYP.)
R
N
HL
C1
S - M5 THD
(3 TYP.)
R
H
Q - DIA.
(2 TYP.)
J
R
TAB#110 t=0.5
P
G
G2
E2
C2E1
E2 C1
E1
G1
Outline Drawing and Circuit Diagram
Dimensions
A
B
C
D
E
F
G
H
J
Inches
3.70
3.150±0.01
1.57
1.34
1.22 Max.
0.90
0.85
0.79
0.71
Millimeters
94.0
80.0±0.25
40.0
34.0
31.0 Max.
23.0
21.5
20.0
18.0
Dimensions
K
L
M
N
P
Q
R
S
Inches
0.67
0.63
0.51
0.47
0.28
0.256 Dia.
0.16
M5 Metric
Millimeters
17.0
16.0
13.0
12.0
7.0
Dia. 6.5
4.0
M5
Description:
Mitsubishi IGBT Modules are de-
signed for use in switching appli-
cations. Each module consists of
two IGBTs in a half-bridge configu-
ration with each transistor having a
reverse-connected super-fast re-
covery free-wheel diode. All com-
ponents and interconnects are iso-
lated from the heat sinking base-
plate, offering simplified system
assembly and thermal manage-
ment.
Features:
ٗ Low Drive Power
ٗ Low VCE(sat)
ٗ Discrete Super-Fast Recovery
Free-Wheel Diode
ٗ High Frequency Operation
ٗ Isolated Baseplate for Easy
Heat Sinking
Applications:
ٗ AC Motor Control
ٗ Motion/Servo Control
ٗ UPS
ٗ Welding Power Supplies
Ordering Information:
Example: Select the complete part
module number you desire from
the table below -i.e. CM100DY-
12H is a 600V (VCES), 100 Am-
pere Dual IGBT Module.
Type
CM
Current Rating
Amperes
100
VCES
Volts (x 50)
12
Sep.1998




Mitsubishi Electric Semiconductor

CM100DY-12H Datasheet Preview

CM100DY-12H Datasheet

IGBT Module

No Preview Available !

MITSUBISHI IGBT MODULES
CM100DY-12H
HIGH POWER SWITCHING USE
INSULATED TYPE
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings
Symbol
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E SHORT)
Gate-Emitter Voltage (C-E SHORT)
Collector Current (TC = 25°C)
Peak Collector Current
Emitter Current** (TC = 25°C)
Peak Emitter Current**
Maximum Collector Dissipation (TC = 25°C, Tj 150°C)
Mounting Torque, M5 Main Terminal
Tj
Tstg
VCES
VGES
IC
ICM
IE
IEM
Pc
Mounting Torque, M6 Mounting
Weight
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
Viso
*Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Collector-Cutoff Current
ICES
VCE = VCES, VGE = 0V
Gate Leakage Current
IGES
VGE = VGES, VCE = 0V
Gate-Emitter Threshold Voltage
VGE(th)
IC = 10mA, VCE = 10V
Collector-Emitter Saturation Voltage
VCE(sat)
IC = 100A, VGE = 15V
IC = 100A, VGE = 15V, Tj = 150°C
Total Gate Charge
QG VCC = 300V, IC = 100A, VGE = 15V
Emitter-Collector Voltage
VEC IE = 100A, VGE = 0V
** Pulse width and repetition rate should be such that device junction temperature rise is negligible.
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Resistive
Turn-on Delay Time
Load
Rise Time
Switch
Turn-off Delay Time
Times
Fall Time
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Cies
Coes
Cres
td(on)
tr
td(off)
tf
trr
Qrr
VGE = 0, VCE = 10V
VCC = 300V, IC = 100A,
VGE1 = VGE2 = 15V, RG = 6.3
IE = 100A, diE/dt = –200A/µs
IE = 100A, diE/dt = –200A/µs
CM100DY-12H
–40 to 150
–40 to 125
600
±20
100
200*
100
200*
400
1.47 ~ 1.96
1.96 ~ 2.94
190
2500
Units
°C
°C
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
N·m
N·m
Grams
Vrms
Min. Typ. Max. Units
– – 1.0 mA
– – 0.5 µA
4.5 6.0 7.5 Volts
– 2.1 2.8** Volts
– 2.15 – Volts
– 300 –
nC
– – 2.8 Volts
Min. Typ. Max. Units
– – 10 nF
––
3.5 nF
––
2 nF
– – 120 ns
– – 300 ns
– – 200 ns
– – 300 ns
– – 110 ns
– 0.27 –
µC
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min. Typ. Max. Units
Thermal Resistance, Junction to Case
Rth(j-c)
Per IGBT
– – 0.31 °C/W
Thermal Resistance, Junction to Case
Rth(j-c)
Per FWDi
– – 0.70 °C/W
Contact Thermal Resistance
Rth(c-f)
Per Module, Thermal Grease Applied
– 0.075 °C/W
Sep.1998


Part Number CM100DY-12H
Description IGBT Module
Maker Mitsubishi Electric Semiconductor
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CM100DY-12H Datasheet PDF






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