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Mitsubishi Electric

CM100DY-24A Datasheet Preview

CM100DY-24A Datasheet

IGBT Module

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CM100DY-24A
MITSUBISHI IGBT MODULES
CM100DY-24A
HIGH POWER SWITCHING USE
¡IC ................................................................... 100A
¡VCES ......................................................... 1200V
¡Insulated Type
¡2-elements in a pack
APPLICATION
AC drive inverters & Servo controls, etc
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
94
17 23
23
17
C2E1
E2
C1
2-φ6.5 MOUNTING HOLES
12 12 12
80±0.25
3-M5 NUTS
4
16 7 16 7 16
LABEL
TAB #110. t=0.5
C2E1
E2 C1
CIRCUIT DIAGRAM
Jul. 2004




Mitsubishi Electric

CM100DY-24A Datasheet Preview

CM100DY-24A Datasheet

IGBT Module

No Preview Available !

ABSOLUTE MAXIMUM RATINGS (Tj = 25°C)
Symbol
VCES
VGES
IC
ICM
IE (Note 1)
IEM (Note 1)
PC (Note 3)
Tj
Tstg
Viso
Parameter
Collector-emitter voltage
Gate-emitter voltage
Collector current
Emitter current
Maximum collector dissipation
Junction temperature
Storage temperature
Isolation voltage
Torque strength
Weight
G-E Short
C-E Short
DC, TC = 84°C*1
Pulse
Pulse
TC = 25°C*1
Conditions
Main terminal to base plate, AC 1 min.
Main terminal M5
Mounting holes M6
Typical value
MITSUBISHI IGBT MODULES
CM100DY-24A
HIGH POWER SWITCHING USE
(Note 2)
(Note 2)
Ratings
1200
±20
100
200
100
200
672
–40 ~ +150
–40 ~ +125
2500
2.5 ~ 3.5
3.5 ~ 4.5
310
Unit
V
V
A
A
W
°C
°C
V
N•m
g
ELECTRICAL CHARACTERISTICS (Tj = 25°C)
Symbol
Parameter
Test conditions
ICES
VGE(th)
IGES
VCE(sat)
Cies
Coes
Cres
QG
td(on)
tr
td(off)
tf
trr (Note 1)
Qrr (Note 1)
VEC(Note 1)
Rth(j-c)Q
Rth(j-c)R
Rth(c-f)
RG
Collector cutoff current
Gate-emitter threshold
voltage
Gate leakage current
Collector-emitter saturation
voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Reverse recovery time
Reverse recovery charge
Emitter-collector voltage
Thermal resistance
Contact thermal resistance
External gate resistance
VCE = VCES, VGE = 0V
IC = 10mA, VCE = 10V
VGE = VGES, VCE = 0V
Tj = 25°C
Tj = 125°C
IC = 100A, VGE = 15V
VCE = 10V
VGE = 0V
VCC = 600V, IC = 100A, VGE = 15V
VCC = 600V, IC = 100A
VGE1 = VGE2 = 15V
RG = 3.1, Inductive load switching operation
IE = 100A
IE = 100A, VGE = 0V
IGBT part (1/2 module)*1
FWDi part (1/2 module)*1
Case to fin, Thermal compound Applied (1/2 module)*1,*2
Min.
6
3.1
*1 : Tc, Tf measured point is just under the chips.
*2 : Typical value is measured by using Shin-etsu Silicone “G-746”.
Note 1. IE, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).
2. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating.
3. Junction temperature (Tj) should not increase beyond 150°C.
Limits
Typ.
7
2.1
2.4
500
5.0
0.022
Max.
1
Unit
mA
8
0.5
3.0
17.5
1.5
0.34
100
70
400
350
150
3.8
0.186
0.34
42
V
µA
V
nF
nC
ns
ns
µC
V
°C/W
Jul. 2004


Part Number CM100DY-24A
Description IGBT Module
Maker Mitsubishi Electric
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CM100DY-24A Datasheet PDF






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