* 30V,5.1A , RDS(ON)=35mΩ@VGS=10V
* Improved dv/dt capability
* Fast switching
* Green Device Available Applications
* MB / VGA / Vcore
* Load Sw.

SOT23S Pin Configuration D D S G G S BVDSS 30V RDSON 35m ID 5.1A Features
* 30V,5.1A , RDS(ON)=35mΩ@VGS=1.

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.

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