Datasheet Summary
30V N-Channel MOSFETs
General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency fast switching applications.
SOT23-3S Pin Configuration
BVDSS 30V
RDSON 24m
ID 6.5A
Features
- 30V,6.5A, RDS(ON) =24mΩ @VGS = 10V
- Improved dv/dt capability
- Fast switching
- 100% EAS Guaranteed
- Green Device Available
Applications
- MB / VGA / Vcore
- Load Switch
-...